![]() Ionescu AM, Riel H (2011) Tunnel field-effect transistors as energy efficient electronic switches. Electron Devices 45:620–625įrank DJ, Dennard RH, Nowak E, Solomon PM, Taur Y, Wong HSP (2001) Device scaling limits of Si MOSFETs and their application dependencies. 89:70–76īohr M, Elmansy Y (1998) Technology for advanced high-performance microprocessors. The proposed L-TFET is free from ambipolarity issues and can be used to develop low-power switching devices.Īhmad S, Alam N, Hasan M (2018) Robust TFET SRAM cell for ultralow power IoT applications. The simplified fabrication steps of the proposed device have also been discussed. The pocket engineering techniques suppress the leakage without degrading the ON current, threshold voltage and SS of the proposed device. The device has been analyzed in terms of DC as well as AC analysis and offers ON-state current of 2.12*10 −5 Aμm −1, OFF-state current of 1.09*10 −13 Aμm −1, current ratio of ~10 8 and sub-threshold slope (SS) of 21 mV/decade and the threshold voltage of 0.26 V and compared to the conventional Si/Ge source L-shaped TFETs without pocket simulation result. The electrical characteristics of the device has been investigated by using Synopsys Sentaurus TCAD tool and compared with some recent other TFETs. In this work, the performance of the heterojunction L-Tunnel Field Effect Transistor (LTFET) has been analyzed with different engineering techniques such as bandgap engineering, pocket engineering, work-function engineering, and gate dielectric engineering, respectively. ![]()
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